Front Tracking Simulations of Ion Deposition and Resputtering

This paper describes surface evolution formulated in terms of a Hamilton-Jacobi equation and a solution algorithm based on a three-dimensional front tracking algorithm. Our method achieves sharp resolution in the evolution of surface edges and corners. This study is motivated by semiconductor chip evolution during deposition and resput-tering processes. For this reason, we discuss here the eeects of diiuse rescattering on surface features. We illustrate some of the three-dimensional capabilities of the front tracking algorithm. We also present a validation study by display of two-dimensional cross sections of three-dimensional simulations of a nite length trench. The cross sections correspond to two-dimensional simulations of S. Hamaguchi and S. M. Rossnagel.